2SC5964-TD-H Bipolar Transistores – BJT BIP NPN 3A 50V
Product Description
Productum attributum | Precium attributum |
Fabrica: | onsemi |
Product Category: | Bipolar Transistores - BJT |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | SOT-89-3 |
Transistor Polarity: | NPN |
Configurationis: | Unius |
Collector- Emitte intentione VCEO Max: | 50 V |
Collector- Base Voltage VCBO: | 100 V |
Emitte- Base Voltage VEBO: | 6 V |
Collector-Emitte Saturationis intentione: | 100 mV |
Maximum DC Collector Current: | 3 A |
Pd - Potentia dissipatio: | 3.5 W |
Lucrum Bandwidth Product fT: | 380 MHz |
Minimum Operating Temperature: | - |
Maximum Operating Temperature: | + 150 C |
Series: | 2SC5964 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | onsemi |
Continua Collector Current: | 3 A |
DC Collector/Base Lucrum hfe Min: | 200 |
Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 1000 |
Subcategoria: | Transistors |
Technologia: | Si |
Unitas pondus: | 0.00473 oz |
• adoptionis MBIT processum
• Minimum collector emittere satietatem voltage
• Halogen gratis obsequio
• magna current facultatem
• summus celeritas mutandi
•DC/ DC converter, cursus publici, aurigae lampadis, agitator motoris, mico