BSC030N08NS5ATMA1 MOSFET N-Ch 80V 100A
Product Description
Productum attributum | Precium attributum |
Fabrica: | Infineon |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | TDSON-8 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | LXXX V |
Id - Continua Exhaurire Current: | 100 A |
Rds On - Drain-Source Resistentia: | 4.5 mOhms |
Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
Vgs th - Porta-Source Limen Voltage: | 2.2 V |
Qg - porta praecipe: | 61 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 139 W |
Channel Modus: | Enhancement |
Nomen: | OPTIMOS' |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | Infineon Technologies |
Configurationis: | Unius |
Fall tempus: | 13 ns |
Transconductance - Min: | 55 S |
Height: | 1.27 mm |
Longitudo; | 5.9 mm |
Product Type: | MOSFET |
Tempus surge: | 12 ns |
Series: | OPTIMOS 5 |
Factory Pack Quantity: | 5000 |
Subcategoria: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off mora Tempus: | 43 ns |
Typical Turn-De mora Tempus: | 20 ns |
Latitudo: | 5.15 mm |
Pars # Aliases: | BSC030N08NS5 SP001077098 |
Unitas pondus: | 0.017870 oz |
• Optimized ad altum faciendum SMPS, egsync.rec.
• C% NIVIS CASUS probata
• Superior scelerisque resistentia
•N-cannel
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• Halogen-liber secundum IEC61249-2-21