BUK9K35-60E,115 MOSFET BUK9K35-60E/SOT1205/LFPAK56D
Product Description
Productum attributum | Precium attributum |
Fabrica: | Neperia |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | LFPAK-56D-8 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 2 Channel |
Vds - Drain-Source Naufragii Voltage: | 60 V |
Id - Continua Exhaurire Current: | 22 A |
Rds On - Drain-Source Resistentia: | 32 mOhms |
Vgs - Porta-Source Voltage: | - 10 V, + 10 V |
Vgs th - Porta-Source Limen Voltage: | 1.4 V |
Qg - porta praecipe: | 7.8 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Potentia dissipatio: | 38 W |
Channel Modus: | Enhancement |
Quid: | AEC-Q101 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | Neperia |
Configurationis: | Dual |
Fall tempus: | 10.6 ns |
Product Type: | MOSFET |
Tempus surge: | 11.3 ns |
Factory Pack Quantity: | 1500 |
Subcategoria: | MOSFETs |
Transistor Type: | 2 N-Channel |
Typical Turn-Off mora Tempus: | 14.9 ns |
Typical Turn-De mora Tempus: | 7.1 ns |
Pars # Aliases: | 934066977115 |
Unitas pondus: | 0.00371 oz |
♠ BUK9K35-60E Dual N alveum 60 V, 35 logicum MOSFET
Dual logica planities N-canali MOSFET in LFPAK56D (Dual Power-SO8) sarcina utens technicae artis TrenchMOS.Productum hoc designatum est et idoneum ad AEC Q101 vexillum ad usum in applicationibus autocinetis altum faciendis.
• Dual MOSFET
• Q101 Obsequium
• Repetita NIVIS aestimavit
• Idoneum pro CLXXV ° C ambitibus thermally postulando propter rating
• Dialectica vera porta cum VGS (th) rating maioris quam 0.5 V ad 175 °C
• 12 V Systemata Automotiva
• Motors, lampades et imperium solenoid
• Transmissio imperium
• ultra princeps perficientur potentia commutatione