CSD18563Q5A MOSFET 60V N-Channel NexFET Power MOSFET
Product Description
Productum attributum | Precium attributum |
Fabrica: | Texas Instrumenta |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | VSONP-8 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 60 V |
Id - Continua Exhaurire Current: | 100 A |
Rds On - Drain-Source Resistentia: | 6.8 mOhms |
Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
Vgs th - Porta-Source Limen Voltage: | 1.7 V |
Qg - porta praecipe: | 15 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 116 W |
Channel Modus: | Enhancement |
Nomen: | NexFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | Texas Instrumenta |
Configurationis: | Unius |
Fall tempus: | 1.7 ns |
Height: | 1 mm |
Longitudo; | 5.75 mm |
Productum: | Potentia MOSFETs |
Product Type: | MOSFET |
Tempus surge: | 6.3 ns |
Series: | CSD18563Q5A |
Factory Pack Quantity: | 2500 |
Subcategoria: | MOSFETs |
Transistor Type: | I N-Canale Power MOSFET |
Typus: | 60 V N-Channel NexFET Power MOSFETs |
Typical Turn-Off mora Tempus: | 11.4 ns |
Typical Turn-De mora Tempus: | 3.2 ns |
Latitudo: | 4.9 mm |
Unitas pondus: | 0.00304 oz |
CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET
Hoc 5.7 mΩ, 60 V FILII 5 mm 6 mm NexFET™ potestas MOSFET designata est ad par cum CSD18537NQ5A potestate FET et agendum ut sync FET ad perficiendam hircum industrialem convertentis solutionem assulam.
• ultra-low Qg et Qgd
• mollis Corpus Diode ad Reducitur Ringing
• Minimum Scelerisque Repugnantia
• NIVIS Rated
• Level Logica
• Pb-Free Terminatio Plating
• RoHS Compliant
• Halogen Free
• FIL 5 mm × 6 mm Plastic Package
• Low-Fet pro Industrial Buck Converter
• Secundarium Latus Synchroni Rectifier
• Motor Imperium