FDMC6679AZ MOSFET -30V P-channel Power Trench
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | Power-33-8 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 20 A |
| Rds On - Drain-Source Resistentia: | X mOhms |
| Vgs - Porta-Source Voltage: | - 25 V, + 25 V |
| Vgs th - Porta-Source Limen Voltage: | 1.8 V |
| Qg - porta praecipe: | 37 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 41 W |
| Channel Modus: | Enhancement |
| Nomen: | PowerTrench |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi / Fairchild |
| Configurationis: | Unius |
| Transconductance - Min: | 46 S |
| Height: | 0.8 mm |
| Longitudo; | 3.3 mm |
| Product Type: | MOSFET |
| Series: | FDMC6679AZ |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Latitudo: | 3.3 mm |
| Unitas pondus: | 0.00583 oz |
FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ
FDMC6679AZ designatus est ut damna in oneris switch applicationes minuerent.Progressus tam in siliconibus quam in technologia sarcinarum coniunctae sunt ut infimum rDS(on) et ESD praesidium offerrent.
• Max rDS(on) = 10 mΩ in VGS = -10 V, ID = -11.5 A
• Max rDS(on) = 18 mΩ in VGS = -4.5 V, ID = -8.5 A
• HBM ESD praesidium gradu VIII kv typicam (note III)
• Fundo VGSS range (-25 V) pro altilium applications
• High perficientur fossa technologia maxime humilis rDS (on)
• Princeps potentia et vena pertractatio facultatem
• Cessatio est Plumbum libero et RoHS Compliant
• Lond Switch in Codicillus ac Servo
• Comentarius Pugna Pack Power Management
