FGH40T120SMD-F155 IGBT Transistores 1200V 40A Field Stop Fossa IGBT
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | IGBT Transistors |
| Technologia: | Si |
| Sarcina / Case: | TO-247G03-3 |
| Adscendens Style: | per foramen |
| Configurationis: | Unius |
| Collector- Emitte intentione VCEO Max: | 1200 V |
| Collector-Emitte Saturationis intentione: | 2 V |
| Maxime Porta Emitte intentione: | 25 V |
| Continua Collector Current ad 25 C: | 80 A |
| Pd - Potentia dissipatio: | 555 W |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Series: | FGH40T120SMD |
| Packaging: | Tubus |
| Notam: | onsemi / Fairchild |
| Continua Collector Current Ic Max: | 40 A |
| Porta-Emitte Lacus Current: | 400 nA |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: | 30 |
| Subcategoria: | IGBTs |
| Pars # Aliases: | FGH40T120SMD_F155 |
| Unitas pondus: | 0.225401 oz |
♠ IGBT - Field Stop, Fossa 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155
Usura technicae campi innovative prohibendam fossam IGBT technologiae, DE Nova serie semiconductoris agri sistendi fossam IGBTs offerunt optimam observantiam ad applicationem mutandi difficile sicut inverter solares, UPS, welder et PFC applicationes.
• FS Trench Technology, Temperature Positive Coefficient
• EXILIM Switching
• Saturatio Low Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• C% partium probata ILM(I)
• Input Impedimentum High
• Hae machinae sunt Pb−Free et sunt RoHS Compliant
• Solaris Inverter, Welder, UPS & PFC applicationes
