FGH40T120SMD-F155 Transistores IGBT 1200V 40A Fossae Sistentis in Campo IGBT
♠ Descriptio Producti
| Attributum Producti | Valor Attributi |
| Fabricator: | inseminatum |
| Categoria Producti: | Transistores IGBT |
| Technologia: | Si |
| Sarcina / Capsa: | TO-247G03-3 |
| Modus Montandi: | Per Foramen |
| Configuratio: | Sola |
| Tensio Collectoris-Emittoris VCEO Maxima: | 1200 V |
| Tensio Saturationis Collectoris-Emittoris: | Duo voltia |
| Maxima Tensio Emitteris Portae: | XXV V |
| Currens Collectoris Continuus ad 25°C: | 80 A |
| Pd - Dissipatio Potentiae: | 555 O |
| Temperatura Operativa Minima: | - 55°C |
| Temperatura Maxima Operativa: | + 175°C |
| Series: | FGH40T120SMD |
| Involucrum: | Tubus |
| Marca: | in semi / Fairchild |
| Currens Collectoris Continui Ic Max: | 40 A |
| Currens Effluentiae Portae-Emittoris: | 400 nA |
| Typus Producti: | Transistores IGBT |
| Quantitas Sarcinae Fabricae: | 30 |
| Subcategoria: | IGBTs |
| Alias Partium #: | FGH40T120SMD_F155 |
| Pondus Unitarium: | 0.225401 unciae |
♠ IGBT - Clausura in Campo, Fossa 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155
Nova series IGBT fossarum sistoriarum ab ON Semiconductor fabricata, technologia innovativa IGBT fossarum sistoriarum in campo utens, optimam praebet efficaciam pro applicationibus commutationis durae, ut invertere solare, UPS, machina ferratoria, et applicationes PFC.
• Technologia Fossae FS, Coefficiens Temperaturae Positivus
• Commutatio Celeris
• Tensio Saturationis Humilis: VCE(sat) = 1.8 V @ IC = 40 A
• 100% partium pro ILM(1) probatarum
• Impedentia Input Alta
• Hae machinae plumbeo carent et RoHS congruunt.
• Applicationes Invertoris Solaris, Machinae Solatoriae, UPS et PFC
