FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series?
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | per foramen |
| Sarcina / Case: | TO-251-3 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | DC V |
| Id - Continua Exhaurire Current: | 1.9 A |
| Rds On - Drain-Source Resistentia: | 4.7 Ohms |
| Vgs - Porta-Source Voltage: | - 30 V, + 30 V . |
| Vgs th - Porta-Source Limen Voltage: | 2 V |
| Qg - porta praecipe: | 12 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 2.5 W |
| Channel Modus: | Enhancement |
| Packaging: | Tubus |
| Notam: | onsemi / Fairchild |
| Configurationis: | Unius |
| Fall tempus: | 28 ns |
| Transconductance - Min: | 5 S |
| Height: | 6.3 mm |
| Longitudo; | 6.8 mm |
| Product Type: | MOSFET |
| Tempus surge: | 25 ns |
| Series: | FQU2N60C |
| Factory Pack Quantity: | 5040 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typus: | MOSFET |
| Typical Turn-Off mora Tempus: | 24 ns |
| Typical Turn-De mora Tempus: | 9 ns |
| Latitudo: | 2.5 mm |
| Unitas pondus: | 0.011993 oz |
MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Hoc N−Channel amplificationis modus potentiae MOSFET educitur utens onsemi proprietatis plani clavum et DMOS technologiae.Haec technologia MOSFET provecta praesertim formata est ad resistentiam reducendam, et ad perficiendum mutandum superiorem et ad vires energiae cadentis altae.Hae machinis aptae sunt ad modum commeatus potentiae switched, factorem potestatis activum correctionis (PFC), ac lampadis electronicarum saburra.
• 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Porta Low Praecipe (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• C% NIVIS Exertus
• Hae technae sunt Halid Free et sunt RoHS Compliant
