IDW30G120C5BFKSA1 Schottky Diocles & Rectifiers SIC FRIP/DISCRETE

Description:

Manufacturers: Infineon

Product Category:Schottky Diodes & Rectifiers

Data Sheet:IDW30G120C5BFKSA1

Descriptio: DIODE GEN PURP 1200V 44A TO247-3

RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Infineon
Product Category: Schottky Diodes & Rectifiers
RoHS: Singula
Productum: Schottky Pii Carbide Diocles
Adscendens Style: per foramen
Sarcina / Case: TO-247-3
Configurationis: Dual Anode Communi Cathode
Technologia: Sic
Si - Porro Current: 30 A
Vrrm - Repetita inversa intentione; 1.2 kV
Vf - Deinceps intentione: 1.4 V
Ifsm - Ante Surge Current: 240 A
Ir - Reverse Current: 17 uA
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: IDW30G120C5
Packaging: Tubus
Notam: Infineon Technologies
Pd - Potentia dissipatio: 332 W
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 240
Subcategoria: Diocles & Rectifiers
Nomen: CoolSiC
Vr - Reverse intentione: 1.2 kV
Pars # Aliases: IDW30G120C5B SP001123716
Unitas pondus: 1.340411 oz

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  • ·Revolutionary materia semiconductor - Silicon Carbide

     ·Nulla vicissim recuperatio current / nulla deinceps recuperatio

    ·Temperatus independens mutandi mores

    ·Minimum deinceps intentione usque ad excelsum operating temperatus

    ·Stricta deinceps voltage distribution

    ·Optimum scelerisque perficiendi

    ·Facultatem ad current fluctus extenso

    ·Certa dv/dt asperitas

     ·Secundum secundum JEDEC1) ad scopum applications

    ·PB-Plumbi gratis;RoHS facilis

    ·Solaris inverters

    ·Interminabilis potentia commeatus

    ·Motor foras

    ·Virtus Factor Correctio

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