IKW50N65ES5XKSA1 IGBT Transistores INDUSTRIA 14
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Infineon |
| Product Category: | IGBT Transistors |
| Technologia: | Si |
| Sarcina / Case: | TO-247-3 |
| Adscendens Style: | per foramen |
| Configurationis: | Unius |
| Collector- Emitte intentione VCEO Max: | 650 V |
| Collector-Emitte Saturationis intentione: | 1.35 V |
| Maxime Porta Emitte intentione: | 20 V |
| Continua Collector Current ad 25 C: | 80 A |
| Pd - Potentia dissipatio: | 274 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Series: | TRENCHSTOP 5 S5 |
| Packaging: | Tubus |
| Notam: | Infineon Technologies |
| Porta-Emitte Lacus Current: | 100 nA |
| Height: | 20.7 mm |
| Longitudo; | 15.87 mm |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: | 240 |
| Subcategoria: | IGBTs |
| Nomen: | TRENCHSTOP |
| Latitudo: | 5.31 mm |
| Pars # Aliases: | IKW50N65ES5 SP001319682 |
| Unitas pondus: | 0.213537 oz |
HighspeedS5technology offering
• Highspeedsmoothswitchingdeviceforhard & softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
• IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
•Maximumjunctiontemperare175°C
• QualifiedaccordingtoJEDECfortargetapplications
• Pb-freeleadplating; RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
• Resonantconverters
• Uninterruptiblepowersupplies
• Weldingconverters
• Midtohighrangeswitchingfrequencyconverters
