IPD50N04S4-08 MOSFET N-Ch 40V 50A DPAK-2 OPTIMOS-T2

Description:

Manufacturers: Infineon
Product Category: MOSFET
Data Sheet:IPD50N04S4-08
Description: MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
RoHS status: RoHS Compliant


Product Detail

Features

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Infineon
Product Category: MOSFET
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Case: TO-252-3
Transistor Polarity: N-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: 40 V
Id - Continua Exhaurire Current: 50 A
Rds On - Drain-Source Resistentia: 7.2 mOhms
Vgs - Porta-Source Voltage: - 20 V, + 20 V
Vgs th - Porta-Source Limen Voltage: 2 V
Qg - porta praecipe: 22.4 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Potentia dissipatio: 46 W
Channel Modus: Enhancement
Quid: AEC-Q101
Nomen: OPTIMOS'
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Infineon Technologies
Configurationis: Unius
Fall tempus: 6 ns
Height: 2.3 mm
Longitudo; 6.5 mm
Product Type: MOSFET
Tempus surge: 7 ns
Series: OPTIMOS-T2
Factory Pack Quantity: 2500
Subcategoria: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off mora Tempus: 5 ns
Typical Turn-De mora Tempus: 5 ns
Latitudo: 6.22 mm
Pars # Aliases: IPD5N4S48XT SP000711450 IPD50N04S408ATMA1
Unitas pondus: 0.011640 oz

  • Previous:
  • Deinde:

  • • N-alveum - Enhancement modus
    • AEC quid
    • MSL1 usque ad apicem reflowo 260°C
    • 175° C temperatura operating
    • Green Product (RoHS facilis)
    • C% NIVIS probata

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