IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OPTIMOS-T2
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | TO-252-3 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 40 V |
| Id - Continua Exhaurire Current: | 50 A |
| Rds On - Drain-Source Resistentia: | 9.3 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 3 V |
| Qg - porta praecipe: | 18.2 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Potentia dissipatio: | 41 W |
| Channel Modus: | Enhancement |
| Quid: | AEC-Q101 |
| Nomen: | OPTIMOS' |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Notam: | Infineon Technologies |
| Configurationis: | Unius |
| Fall tempus: | 5 ns |
| Height: | 2.3 mm |
| Longitudo; | 6.5 mm |
| Product Type: | MOSFET |
| Tempus surge: | 7 ns |
| Series: | OPTIMOS-T2 |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off mora Tempus: | 4 ns |
| Typical Turn-De mora Tempus: | 5 ns |
| Latitudo: | 6.22 mm |
| Pars # Aliases: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Unitas pondus: | 330 mg |
• N-alveum - Enhancement modus
• AEC quid
• MSL1 usque ad apicem reflowo 260°C
• 175° C temperatura operating
• Green Product (RoHS facilis)
• C% NIVIS probata
