IPD90N06S4-04 MOSFET N-Ch 60V 90A DPAK-2 OPTIMOS-T2
♠ Descriptio Producti
| Attributum Producti | Valor Attributi |
| Fabricator: | Infineon |
| Categoria Producti: | MOSFET |
| RoHS: | Detalia |
| Technologia: | Si |
| Modus Montandi: | SMD/SMT |
| Sarcina / Capsa: | TO-252-3 |
| Polaritas Transistoris: | Canalis N |
| Numerus Canalium: | 1 Canalis |
| Vds - Tensio Disruptionis Fontium-Drain: | LX V |
| Id - Currens Continuus Exhauriendi: | 90 A |
| Rds Activata - Resistentia Fontis-Drenagii: | 3.8 mOhmia |
| Nomen Mercatorium: | OptiMOS |
| Involucrum: | Rotula |
| Involucrum: | Taenia Seca |
| Involucrum: | MouseReel |
| Marca: | Infineon Technologies |
| Configuratio: | Sola |
| Altitudo: | 2.3 mm |
| Longitudo: | 6.5 mm |
| Typus Producti: | MOSFET |
| Series: | OptiMOS-T2 |
| Quantitas Sarcinae Fabricae: | 2500 |
| Subcategoria: | MOSFETs |
| Typus Transistoris: | 1 Canalis N |
| Latitudo: | 6.22 mm |
| Alias Partium #: | SP000374323 IPD9N6S44XT IPD90N06S404ATMA1 |
| Pondus Unitarium: | 0.011640 unciae |
• Canalis N – Modus amplificationis
• AEC qualificatus
• MSL1 usque ad 260°C apicem refluxus
• Temperatura operandi 175°C
• Productum Viridis (RoHS congruens)
• 100% contra Avalanche probatum
