IXFA22N65X2 MOSFET 650V/22A Ultra Junction X2
Product Description
Productum attributum | Precium attributum |
Fabrica: | IXYS |
Product Category: | MOSFET |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | TO-263-3 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 650 V |
Id - Continua Exhaurire Current: | 22 A |
Rds On - Drain-Source Resistentia: | 160 mOhms |
Vgs - Porta-Source Voltage: | - 30 V, + 30 V . |
Vgs th - Porta-Source Limen Voltage: | 2.7 V |
Qg - porta praecipe: | 38 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 360 W |
Channel Modus: | Enhancement |
Nomen: | HiPerFET |
Packaging: | Tubus |
Notam: | IXYS |
Configurationis: | Unius |
Fall tempus: | 10 ns |
Transconductance - Min: | 8 S |
Product Type: | MOSFET |
Tempus surge: | 35 ns |
Series: | 650V Ultra Junction X2 |
Factory Pack Quantity: | 50 |
Subcategoria: | MOSFETs |
Typical Turn-Off mora Tempus: | 33 ns |
Typical Turn-De mora Tempus: | 38 ns |
Unitas pondus: | 0.139332 oz |