LM74800QDRRRQ1 3-V ad 65-V, automotivum specimen diode moderatoris repellendi ad tergum NFETs 12-WSON -40 ad 125
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Texas Instrumenta |
| Product Category: | Potestas Management Specialioribus - PMIC |
| Series: | LM7480-Q1 |
| Typus: | Automotive |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | WSON-12 |
| Output Current: | 2 A, 4 A |
| Input intentione dolor: | 3 V ad 65 V |
| Output intentione dolor: | 12.5 V ad 14.5 V |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 125 C |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Texas Instrumenta |
| Input Voltage, Max: | 65 V |
| Input Voltage, Min: | 3 V |
| Maximum output intentione: | 14.5 V |
| Humor Sensitivus: | Ita |
| Supple intentione operating: | 6 V ad 37 V |
| Product Type: | Potestas Management Specialioribus - PMIC |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | PMIC - Power Management ICs |
♠ LM7480-Q1 Specimen Diode Controller cum Lond Dump Praesidium
In LM7480x-Q1 specimen diode moderatoris externam agat ac moderatur ut retro N-Channel MOSFETs aemuletur ut specimen diodum rectificantis cum vi via DE/OFF potestate et tutelae evolutionis.Lata initus copia 3 V ad 65 V tutelam ac potestatem 12-V et 24-V autocinetorum autocinetorum autocinetorum permittit.Cogitatus onera sustinere et tueri potest a copia voltagenum negativis usque ad -65 V. Diode moderatoris integrae idealis (DGATE) primum MOSFET substituere potest diode Schottky pro reverso initus tutelae et output intentionis custodiae.Cum secundo MOSFET in vi viae fabrica sinit onus disiunctio (ON/Off imperium) et tutelae cura HGATE potestate adhibita.In fabrica lineamenta accommodata overvoltage abscise praesidium pluma.LM7480-Q1 duas variantes habet, LM74800-Q1 et LM74801-Q1.LM74800-Q1 vicissim obstaculo currenti utitur interclusio linearis dispositionis et schematis comparatoris vs. LM74801-Q1, quod comparator schema subnixum sustinet.Cum Communi Drain configuratione potestatis MOSFETs, medium punctum adhiberi potest ad consilia OR-ing utens alia diode idealis.LM7480x-Q1 maximam intentionem habet de 65 V. Onera a vagorum overvoltage extensa defendi possunt, sicut CC-V Incompressus Lond Dumps in 24-V systemata Pugna, fabricando cum exterioribus MOSFETs in Communi Source topologiae
• AEC-Q100 apta ad autocinetum applicationes
- I temperatus Fabrica gradus:
-40°C ad +125°C ambientium operating temperatus range
- Fabrica HBM ESD classificationem gradu II "
- Fabrica CDM ESD classification gradu C4B
• 3-V ad 65-V input range
• Reverse initus praesidium ad -65 V *
• exteriora retro-ad-retro N-Channel MOSFETs agitet in communi fundamento et communi fonte configurationum
• Specimen diode operandi cum 10.5-mV A ad C directio gutta voltage deinceps (LM74800-Q1)
• Maximum contra limina deprehendatur (-4.5 mV) cum responsione celeriter (0.5 µs)
• 20-mA cacumen portae (DGATE) currentis turnon
• 2.6-A apicem DGATE turnoff current
• Novifacta overvoltage praesidium
• Minimum 2.87-µA shutdown current (EN/UVLO=low)
• Meets automotive ISO7637 requisita transitoria congruo TVS diode
• Available in spatio salutaris XII-pin WSON sarcina
• Automotive praesidium altilium
- ADAS domain moderatoris
- Camera ECU
- Caput Unitum
- USB HUBs
• Active ORing ad redundantem potestatem
