MBT3904DW1T1G Bipolar Transistores - BJT 200mA 60V Dual NPN
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | Bipolar Transistores - BJT |
| RoHS: | Singula |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SC-70-6 |
| Transistor Polarity: | NPN |
| Configurationis: | Dual |
| Collector- Emitte intentione VCEO Max: | 40 V |
| Collector- Base Voltage VCBO: | 60 V |
| Emitte- Base Voltage VEBO: | 6 V |
| Collector-Emitte Saturationis intentione: | 300 mV |
| Maximum DC Collector Current: | 200 mA |
| Pd - Potentia dissipatio: | 150 mW |
| Lucrum Bandwidth Product fT: | 300 MHz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | MBT3904DW1 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi |
| Continua Collector Current: | - 2 A |
| DC Collector/Base Lucrum hfe Min: | 40 |
| Height: | 0.9 mm |
| Longitudo; | 2 mm |
| Product Type: | BJTs - Bipolar Transistors |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | Transistors |
| Technologia: | Si |
| Latitudo: | 1.25 mm |
| Pars # Aliases: | MBT3904DW1T3G |
| Unitas pondus: | 0.000988 oz |
• hFE, 100−300 • VCE(sed), ≤ 0.4 V
• Simplifies Circuit Design
• reduces Space Board
• Reduces Component
• Available in 8 mm, 7−inch/3,000 Unit Tape et Reel
• S et NSV Praefixum pro Automotive et Alia Applications Unicum Site ac Imperium Mutare Requirements requirunt;AEC.Q101 secundum quid et PPAP Capax
• Hae sunt cogitationes Pb−Free, Halogen Free / BFR Free et sunt Manufacturer
