NCV8402ADDR2G MOSFET 42V2A
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 55 V |
| Id - Continua Exhaurire Current: | 2 A |
| Rds On - Drain-Source Resistentia: | 165 mOhms |
| Vgs - Porta-Source Voltage: | - 14 V, + 14 V |
| Vgs th - Porta-Source Limen Voltage: | 1.3 V |
| Qg - porta praecipe: | - |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | DCCC mW |
| Channel Modus: | Enhancement |
| Quid: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi |
| Configurationis: | Unius |
| Product Type: | MOSFET |
| Series: | NCV8402AD |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Unitas pondus: | 0.00264 oz |
Dual Self-protected Low-Side Coegi cum Temperature et Current Limit
NCV8402D/AD duplicem munitum est low−Side Smart Discrete fabrica.Notae tutelae includunt supercurrentem, overtemperatum, ESD et Drain−to−Gate clampantes ad tutelam enucleandam.Quae res tutelam praebet et duris ambitus autocinetis aptus est.
• brevis Circuit Praesidium
• Scelerisque Shutdown cum Lorem Sileo
• Overvoltage Praesidium
• Integrated Fibulae ad inductionem Switching
• ESD Praesidium
• dV/dt Robustness
• Analog Coegi Capability (Logic Level Input)
• NCV Praefixum pro Automotive et Alia Applications Unicum Situm ac Imperium Mutare Requirements requirentes;AEC.Q101 secundum quid et PPAP Capax
• Hae sunt cogitationes Pb−Free, Halogen Free / BFR Free et sunt Manufacturer
• Varietas resistentis, inductiva et capacitiva Loads transibit
• restituo Electromechanical Nullam et discretam Circuitus
• Automotive / Industrial
