NDS331N MOSFET N-Ch LL FET Enhancement Mode
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 20 V |
| Id - Continua Exhaurire Current: | 1.3 A |
| Rds On - Drain-Source Resistentia: | 210 mOhms |
| Vgs - Porta-Source Voltage: | - 8 V, + VIII V |
| Vgs th - Porta-Source Limen Voltage: | 500 mV |
| Qg - porta praecipe: | 5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 500 mW |
| Channel Modus: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi / Fairchild |
| Configurationis: | Unius |
| Fall tempus: | 25 ns |
| Height: | 1.12 mm |
| Longitudo; | 2.9 mm |
| Productum: | MOSFET Parvus signum |
| Product Type: | MOSFET |
| Tempus surge: | 25 ns |
| Series: | NDS331N |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typus: | MOSFET |
| Typical Turn-Off mora Tempus: | 10 ns |
| Typical Turn-De mora Tempus: | 5 ns |
| Latitudo: | 1.4 mm |
| Pars # Aliases: | NDS331N_NL |
| Unitas pondus: | 0.0009 oz |
N-Canale Logic Level Enhancement Modus Field Effectus Transistor
Hae N−Channel logicae gradus amplificationis modus potentiae campi effectus transistores gignuntur usus DE proprietatis semiconductoris, cellae altae densitatis, technologiae DMOS.Hic processus densitatis altissimae praesertim formandus est ad resistentiam status minimize.Hae machinis aptissima sunt ad applicationes humilium intentionum in libellorum computatrorum, telephoniis portabilibus, PCMCIA schedulis, et aliis curriculis altilium in quibus celeriter mutandi, et demissa potentiae lineae detrimentum in perparvis adumbratione superficiei montis sarcinae necessariae sunt.
• 1.3 A, 20 V
♦ RDS(on) = 0.21 @ VGS = 2.7 V
♦ RDS(on) = 0.16 @ VGS = 4.5 V
• Industry Standard Outline SOT−23 Superficie monte Package Using
Proprietaria SUPERSOT−3 Designatio Superioris Thermal and Electrical Capabilities
• High Density Cell Design for valde Low RDS (on)
• Eximia On-Resistentia et Maximum DC Current Capability
• Hoc est PbFree Fabrica
