NTJD4001NT1G MOSFET 30V 250mA Dual N-Channel
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SC-88-6 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 250 mA |
| Rds On - Drain-Source Resistentia: | 1.5 Ohms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 800 mV |
| Qg - porta praecipe: | 900 pC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 272 mW |
| Channel Modus: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi |
| Configurationis: | Dual |
| Fall tempus: | 82 ns |
| Transconductance - Min: | 80 mS |
| Height: | 0.9 mm |
| Longitudo; | 2 mm |
| Productum: | MOSFET Parvus signum |
| Product Type: | MOSFET |
| Tempus surge: | 23 ns |
| Series: | NTJD4001N |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off mora Tempus: | 94 ns |
| Typical Turn-De mora Tempus: | 17 ns |
| Latitudo: | 1.25 mm |
| Unitas pondus: | 0.010229 oz |
• Maximum portam præcipe Fast Switching
• Parvus Footprint XXX% Minor TSOP−6
• ESD Porta Protecta
• AEC Q101 NVTJD4001N
• Hae machinae sunt Pb−Free et sunt RoHS Compliant
• Minimum Latus Lond SWITCH
• Li−Ion Pugna Suppleed machinae Cell Phones, PDAs, DSC
• Buck Converters
• Level Shifts
