NTMFS4C029NT1G MOSFET fossa 6 30V NCH
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SO-8FL-4 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 46 A |
| Rds On - Drain-Source Resistentia: | 4.9 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 2.2 V |
| Qg - porta praecipe: | 18.6 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 23.6 W |
| Channel Modus: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi |
| Configurationis: | Unius |
| Fall tempus: | 7 ns |
| Transconductance - Min: | 43 S |
| Product Type: | MOSFET |
| Tempus surge: | 34 ns |
| Series: | NTMFS4C029N |
| Factory Pack Quantity: | 1500 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off mora Tempus: | 14 ns |
| Typical Turn-De mora Tempus: | 9 ns |
| Unitas pondus: | 0.09385 oz |
• Maximum RDS (in) ad minimize Conduction Damna
• Maximum capacitatem ad minimize Coegi damna
• Optimised porta praecipe magna Switching damna
• Hae sunt cogitationes Pb−Free, Halogen Free / BFR Free et sunt Manufacturer
• CPU Power Delivery
• DC−DC Converters
