NTZD3154NT1G MOSFET 20V 540mA Dual N-Channel w/ESD
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOT-563-6 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 20 V |
| Id - Continua Exhaurire Current: | 570 mA |
| Rds On - Drain-Source Resistentia: | 550 mOhms, 550 mOhms |
| Vgs - Porta-Source Voltage: | - 7 V, + 7 V |
| Vgs th - Porta-Source Limen Voltage: | 450 mV |
| Qg - porta praecipe: | 1.5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 280 mW |
| Channel Modus: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi |
| Configurationis: | Dual |
| Fall tempus: | 8 ns, 8 ns . |
| Transconductance - Min: | 1 S, 1 S |
| Height: | 0.55 mm |
| Longitudo; | 1.6 mm |
| Productum: | MOSFET Parvus signum |
| Product Type: | MOSFET |
| Tempus surge: | 4 ns, 4 ns |
| Series: | NTZD3154N |
| Factory Pack Quantity: | 4000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off mora Tempus: | 16 ns, 16 ns |
| Typical Turn-De mora Tempus: | 6 ns, 6 ns |
| Latitudo: | 1.2 mm |
| Unitas pondus: | 0.000106 oz |
• Low RDS (on) Improving System Efficiency
• Maximum Limen Voltage
• Footprint 1.6 x 1.6 mm
• ESD Porta Protecta
• Hae sunt cogitationes Pb−Free, Halogen Free / BFR Free et sunt Manufacturer
• Lond / Power SWITCH
• Power Supple Converter Circuitus
• Pugna Management
• Cell Phones, Cameras Digitales, PDAs, Pagers, etc.
