SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | TSOP-6 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 8 A |
| Rds On - Drain-Source Resistentia: | 36 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 3 V |
| Qg - porta praecipe: | 50 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 4.2 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Series: | SI3 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Unius |
| Height: | 1.1 mm |
| Longitudo; | 3.05 mm |
| Product Type: | MOSFET |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Latitudo: | 1.65 mm |
| Unitas pondus: | 0.000705 oz |
• TrenchFET® Power MOSFET
• 100 % Rg et UIS Exertus
• Material categorisation:
Definitiones obsequii quaeso vide datasheet.
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