SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | PowerPAK-1212-8 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 200 V |
| Id - Continua Exhaurire Current: | 3.8 A |
| Rds On - Drain-Source Resistentia: | 1.05 Ohms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 2 V |
| Qg - porta praecipe: | 25 nC |
| Minimum Operating Temperature: | - 50 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 52 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Unius |
| Fall tempus: | 12 ns |
| Transconductance - Min: | 4 S |
| Height: | 1.04 mm |
| Longitudo; | 3.3 mm |
| Product Type: | MOSFET |
| Tempus surge: | 11 ns |
| Series: | SI7 |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off mora Tempus: | 27 ns |
| Typical Turn-De mora Tempus: | 9 ns |
| Latitudo: | 3.3 mm |
| Pars # Aliases: | SI7119DN-GE3 |
| Unitas pondus: | 1 g* |
• Halogen-liber Secundum IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• Minimum Scelerisque Repugnantia PowerPAK® Package cum parva magnitudine ac Minimum 1.07 mm Profile
• 100 % UIS et Rg Expertum
• Active Fibulae in media DC / DC Power commeatus
