SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 60 V |
| Id - Continua Exhaurire Current: | 5.3 A |
| Rds On - Drain-Source Resistentia: | 58 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 1 V |
| Qg - porta praecipe: | 13 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 3.1 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Dual |
| Fall tempus: | 10 ns |
| Transconductance - Min: | 15 S |
| Product Type: | MOSFET |
| Tempus surge: | 15 ns, 65 ns . |
| Series: | SI9 |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off mora Tempus: | 10 ns, 15 ns |
| Typical Turn-De mora Tempus: | 15 ns, 20 ns . |
| Pars # Aliases: | SI9945BDY-GE3 |
| Unitas pondus: | 750 mg |
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