SQJ951EP-T1_GE3 MOSFET Dual P-Cannel 30V AEC-Q101 secundum quid
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | PowerPAK-SO-8-4 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 30 A |
| Rds On - Drain-Source Resistentia: | 14 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 2.5 V |
| Qg - porta praecipe: | 50 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Potentia dissipatio: | 56 W |
| Channel Modus: | Enhancement |
| Quid: | AEC-Q101 |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Dual |
| Fall tempus: | 28 ns |
| Product Type: | MOSFET |
| Tempus surge: | 12 ns |
| Series: | SQ |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off mora Tempus: | 39 ns |
| Typical Turn-De mora Tempus: | 12 ns |
| Pars # Aliases: | SQJ951EP-T1_BE3 |
| Unitas pondus: | 0.017870 oz |
• Halogen-liber secundum IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• AEC-Q101
• 100 % Rg et UIS Exertus
• Obsequium RoHS Directivae 2002/95/EC
