SQM50034EL_GE3 MOSFET N-CIVUS LX-V (DS) 175C MOSFET
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | TO-263-3 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 60 V |
| Id - Continua Exhaurire Current: | 100 A |
| Rds On - Drain-Source Resistentia: | 3.2 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 2 V |
| Qg - porta praecipe: | 60 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Potentia dissipatio: | 150 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Notam: | Vishay / Siliconix |
| Configurationis: | Unius |
| Fall tempus: | 7 ns |
| Product Type: | MOSFET |
| Tempus surge: | 7 ns |
| Series: | SQ |
| Factory Pack Quantity: | 800 |
| Subcategoria: | MOSFETs |
| Typical Turn-Off mora Tempus: | 33 ns |
| Typical Turn-De mora Tempus: | 15 ns |
| Unitas pondus: | 0.139332 oz |
• TrenchFET® potentia MOSFET
• Package cum low scelerisque resistentia
• 100 % Rg et UIS probatum
• AEC-Q101
