STD35P6LLF6 MOSFET P alveum 60V 0.025Ohm typ 35A STripFET F6 Power MOSFET
Product Description
Productum attributum | Precium attributum |
Fabrica: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | TO-252-3 |
Transistor Polarity: | P-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 60 V |
Id - Continua Exhaurire Current: | 35 A |
Rds On - Drain-Source Resistentia: | 28 mOhms |
Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
Vgs th - Porta-Source Limen Voltage: | 1 V |
Qg - porta praecipe: | 30 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Potentia dissipatio: | LXX W |
Channel Modus: | Enhancement |
Nomen: | STripFET |
Series: | STD35P6LLF6 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | STMicroelectronics |
Configurationis: | Unius |
Fall tempus: | 21 ns |
Product Type: | MOSFET |
Tempus surge: | 39 ns |
Factory Pack Quantity: | 2500 |
Subcategoria: | MOSFETs |
Transistor Type: | I P-canale Power MOSFET |
Typical Turn-Off mora Tempus: | 171 ns |
Typical Turn-De mora Tempus: | 51.4 ns |
Unitas pondus: | 0.011640 oz |
♠ STD35P6LLF6 P alveum 60 V, 0.025 Ω typogr., 35 A STripFET™ F6 Power MOSFET in sarcina DPAK
Haec machina P-venale Power MOSFET technologiae STripFET™ F6 amplificata est, cum nova portae fossae structura.Potentia MOSFET consequens in omnibus fasciculis nimis indicat RDS(on) .
Ipsum humilis in resistentia
Ipsum crimen porta humilis
Maximum NIVIS asperitas
Low porta coegi potentia damna
Switching applications