STD4NK100Z MOSFET Automotive-gradus M V, 5.6 Ohm typ 2.2 A SuperMESH POTESTAS MOSFET
Product Description
Productum attributum | Precium attributum |
Fabrica: | STMicroelectronics |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | TO-252-3 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 1 kV |
Id - Continua Exhaurire Current: | 2.2 A |
Rds On - Drain-Source Resistentia: | 6.8 Ohms |
Vgs - Porta-Source Voltage: | - 30 V, + 30 V . |
Vgs th - Porta-Source Limen Voltage: | 4.5 V |
Qg - porta praecipe: | 18 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 90 W |
Channel Modus: | Enhancement |
Quid: | AEC-Q101 |
Nomen: | SuperMESH |
Series: | STD4NK100Z |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | STMicroelectronics |
Configurationis: | Unius |
Fall tempus: | 39 ns |
Height: | 2.4 mm |
Longitudo; | 10.1 mm |
Productum: | Potentia MOSFETs |
Product Type: | MOSFET |
Tempus surge: | 7.5 ns |
Factory Pack Quantity: | 2500 |
Subcategoria: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typus: | SuperMESH |
Typical Turn-De mora Tempus: | 15 ns |
Latitudo: | 6.6 mm |
Unitas pondus: | 0.011640 oz |
♠ Gradus autocineti N alvei 1000 V, 5.6 Ω typ., 2.2 A SuperMESH™ Potentia MOSFET Zener protecta in DPAK
Haec machina N-canale Zener-Potestas MOSFET conservata est, utens STMicroelectronics' SuperMESH™ technologiam, per optimizationem ST bene constitutae habena PowerMESH™ layout consecutus est.Praeter notabilem reductionem in resistentia, haec machina ordinatur ad altam gradum dv/dt capacitatis ad applicationes gravissimas.
• Designatum ad autocinetum applicationes et AEC-Q101 quid
• Summe altitudinis dv/dt facultatem
• C% NIVIS CASUS probata
• crimen porta elevat
• Ipsum humilis capacitatem intrinsecam
• Zener-protected
• applicationem Switching