STD86N3LH5 MOSFET N-cannel 30 V

Description:

Manufacturers: STMicroelectronics
Product Category: MOSFET
Data Sheet:STD86N3LH5
Descriptio: MOSFET N-CH 30V 80A DPAK
RoHS status: RoHS Compliant


Product Detail

Features

Applicationem

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: STMicroelectronics
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Causa: TO-252-3
Transistor Polarity: N-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: 30 V
Id - Continua Exhaurire Current: 80 A
Rds On - Drain-Source Resistentia: 5 mOhms
Vgs - Porta-Source Voltage: - 22 V, + 22 V .
Vgs th - Porta-Source Limen Voltage: 1 V
Qg - porta praecipe: 14 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Potentia dissipatio: LXX W
Channel Modus: Enhancement
Quid: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: STMicroelectronics
Configurationis: Unius
Fall tempus: 10.8 ns
Height: 2.4 mm
Longitudo; 6.6 mm
Product Type: MOSFET
Tempus surge: 14 ns
Series: STD86N3LH5
Factory Pack Quantity: 2500
Subcategoria: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off mora Tempus: 23.6 ns
Typical Turn-De mora Tempus: 6 ns
Latitudo: 6.2 mm
Unitas pondus: 330 mg

♠ Gradus Automotivi N alvei 30 V, 0.0045 Ω typ, 80 A STripFET H5 Power MOSFET in sarcina DPAK

Haec machina N-canali potentia MOSFET elaborata est utendi STMicroelectronics' STripFET™ H5 technologiae.Cogitatus optimized est ad resistentiam in statu gravissimam consequendam, adiuvando FoM quod est inter optimos in suo genere.


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  • Deinde:

  • • Designatum ad autocinetum applicationes et AEC-Q101 quid

    • Minimum in-resistentia RDS (a)

    • High NIVIS CASUS asperitas

    • Low porta coegi potentia damna

    • Switching applications

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