STGIPQ5C60T-HZ IGBT Moduli SLLIMM nano 2nd series IPM, Phase inverta, 5 A, 600 V brevis ambitus rugosus IG.
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | STMicroelectronics |
| Product Category: | IGBT Modules |
| RoHS: | Singula |
| Productum: | IGBT Silicon Carbide Modules |
| Configurationis: | 3-Phase Inverter |
| Collector- Emitte intentione VCEO Max: | DC V |
| Collector-Emitte Saturationis intentione: | 1.7 V |
| Continua Collector Current ad 25 C: | 5 A |
| Porta-Emitte Lacus Current: | - |
| Pd - Potentia dissipatio: | 13.6 W |
| Sarcina / Case: | N2DIP-26 |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 125 C |
| Packaging: | Tubus |
| Notam: | STMicroelectronics |
| Adscendens Style: | per foramen |
| Product Type: | IGBT Modules |
| Series: | STGIPQ5C60T-HZ |
| Factory Pack Quantity: | 360 |
| Subcategoria: | IGBTs |
| Technologia: | Sic |
| Nomen: | SLLIMM |
| Unitas pondus: | 0.000141 oz |
♠ SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V, brevis ambitus rugosus IGBTs
Haec secunda series SLLIMM (minuta deminuta moduli intelligentis formata) -nano compactum, excelsum perficiendi AC motorem in consilio simplici ac rugoso aget praebet.Componitur ex sex auctis brevibus circum- scapulis asperis portae campi IGBTs cum diode liberorum liberorum et trium dimidia pontis HVICs pro porta pulsis, interventus electromagnetici premens (EMI) notas cum celeritate mutandi optimized.Sarcina ordinatur ut melius et facilius advenis in heatsink, et optimized ad scelerisque observantiam et firmitatem in aedificatis applicationibus motoriis vel aliis applicationibus ignobilibus ubi spatium conventus limitatur.Hoc IPM includit amplificatorem amplificatorem omnino indebitum ac comparatorem, qui adhiberi potest ad designandum ambitum tutelae velocitatis et efficientis.SLLIMM™ trademark of STMicroelectronics.
• IPM 5 A, 600 V, 3-phasis IGBT pons invertor comprehendens 3 imperium ICs pro porta pulsis ac diodibus freewheeling.
• 3.3 V, 5 V, 15 V TTL/CMOS input comparatores cum hysteresi et viverra-sursum resistentes
• Internum bootstrap diode
• Optimized pro low electro intercessiones
• Undervoltage lockout
• brevis circuitu aspera TFS IGBTs
• Shutdown munus
• Interlocking munus
• Op-amp pro provectae current sensus
• Comparator culpae praesidium contra supercurrentem
• NTC (UL 1434 CA 2 and 4).
• Ratings de Isolatione 1500 Vrms/min.
• Usque ad ±2 kv ESD praesidium (HBM C = 100 pF, R = 1.5 kΩ)
• UL cognitio: UL 1557, fasciculus E81734
• III, tempus inverters ad motricium agitet
• Dish washers, armarium compressores, systemata calefacientia, condiciones fans aeris, exhaurientes et recirculationem soleatus
