STH3N150-2 MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | STMicroelectronics |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | H2PAK-2 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 1.5 kV |
| Id - Continua Exhaurire Current: | 2.5 A |
| Rds On - Drain-Source Resistentia: | 9 Ohms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 3 V |
| Qg - porta praecipe: | 29.3 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 140 W |
| Channel Modus: | Enhancement |
| Nomen: | PowerMESH |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | STMicroelectronics |
| Configurationis: | Unius |
| Fall tempus: | 61 ns |
| Transconductance - Min: | 2.6 S |
| Product Type: | MOSFET |
| Tempus surge: | 47 ns |
| Series: | STH3N150-2 |
| Factory Pack Quantity: | 1000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | I N-Canale Power MOSFET |
| Typical Turn-Off mora Tempus: | 45 ns |
| Typical Turn-De mora Tempus: | 24 ns |
| Unitas pondus: | 4 g* |
♠ N-canale 1500 V, 2.5 A, 6 Ω typogr.
Hae potentiae MOSFETs ordinantur utentes STMicroelectronics, habena-layout-based process MESH LAMINA consolidata.Effectus fructus est, qui compositus vel melioris effectus est in comparandis partibus vexillum ab aliis artifices praestandis.
• C% NIVIS CASUS probata
• Facultates intrinsecas et Qg elevat
• princeps celeritate mutandi
• Plastic sarcina TO-3PF plene solitaria, iter itineris spatium 5.4 mm (typ.)
• Switching applications
