SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | TO-252-3 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 60 V |
| Id - Continua Exhaurire Current: | 50 A |
| Rds On - Drain-Source Resistentia: | 60 mOhms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 3 V |
| Qg - porta praecipe: | 40 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 113 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Unius |
| Fall tempus: | 30 ns |
| Transconductance - Min: | 22 S |
| Product Type: | MOSFET |
| Tempus surge: | 9 ns |
| Series: | SUD |
| Factory Pack Quantity: | 2000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off mora Tempus: | 65 ns |
| Typical Turn-De mora Tempus: | 8 ns |
| Pars # Aliases: | SUD19P06-60-BE3 |
| Unitas pondus: | 0.011640 oz |
• Halogen-liber secundum IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % UIS Exertus
• Obsequium RoHS Directivae 2002/95/EC
• High Latus Switch ad pontem plena converter
• DC/DC Converter ad LCD Display
