AUIRFN8459TR MOSFET 40V Dual N Channel HEXFET

Description:

Manufacturers: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Arrays

Data Sheet:AUIRFN8459TR

Description: MOSFET 2N-CH 40V 50A 8PQFN

RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Infineon
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Case: PQFN-8
Transistor Polarity: N-Channel
Numerus canalium: 2 Channel
Vds - Drain-Source Naufragii Voltage: 40 V
Id - Continua Exhaurire Current: 70 A
Rds On - Drain-Source Resistentia: 5.9 mOhms
Vgs - Porta-Source Voltage: - 20 V, + 20 V
Vgs th - Porta-Source Limen Voltage: 3 V
Qg - porta praecipe: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Potentia dissipatio: L W
Channel Modus: Enhancement
Quid: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Infineon Technologies
Configurationis: Dual
Fall tempus: 42 ns
Transconductance - Min: 66 S
Height: 1.2 mm
Longitudo; 6 mm
Product Type: MOSFET
Tempus surge: 55 ns
Factory Pack Quantity: 4000
Subcategoria: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off mora Tempus: 25 ns
Typical Turn-De mora Tempus: 10 ns
Latitudo: 5 mm
Pars # Aliases: AUIRFN8459TR SP001517406
Unitas pondus: 0.00304 oz

MOSFET 40V Dual N Channel HEXFET

Haec HEXFET® Potentia MOSFET speciatim destinata ad autocineticam applicationes utitur technicis ultimis processus ut perquam in renitendo per siliconam aream attingat.Additae notae huius designationis sunt 175°C commissurae temperaturae operativae, velocitatis velocitatis et repetitae avalanche rating auctae.Hae lineamenta coniungunt ut hunc productum fabricam maxime efficacem et certam adhibeant in automotiva et multiplici aliarum applicationum varietate.


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