SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 8 V |
| Id - Continua Exhaurire Current: | 5.8 A |
| Rds On - Drain-Source Resistentia: | 35 mOhms |
| Vgs - Porta-Source Voltage: | - 8 V, + VIII V |
| Vgs th - Porta-Source Limen Voltage: | 1 V |
| Qg - porta praecipe: | 12 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 1.7 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Unius |
| Fall tempus: | 10 ns |
| Height: | 1.45 mm |
| Longitudo; | 2.9 mm |
| Product Type: | MOSFET |
| Tempus surge: | 20 ns |
| Series: | SI2 |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off mora Tempus: | 40 ns |
| Typical Turn-De mora Tempus: | 20 ns |
| Latitudo: | 1.6 mm |
| Pars # Aliases: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Unitas pondus: | 0.00094 oz |
• Halogen-liber secundum IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Exertus
• Obsequium RoHS Directivae 2002/95/EC
• Load SWITCH PB Portable Devices
• DC/DC Converter
