BSS123LT1G MOSFET 100V 170mA N-Channel
Product Description
Productum attributum | Precium attributum |
Fabrica: | onsemi |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 100 V |
Id - Continua Exhaurire Current: | 170 mA |
Rds On - Drain-Source Resistentia: | 6 Ohms |
Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
Vgs th - Porta-Source Limen Voltage: | 1.6 V |
Qg - porta praecipe: | - |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 225 mW |
Channel Modus: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | onsemi |
Configurationis: | Unius |
Transconductance - Min: | 80 mS |
Height: | 0.94 mm |
Longitudo; | 2.9 mm |
Productum: | MOSFET Parvus signum |
Product Type: | MOSFET |
Series: | BSS123L |
Factory Pack Quantity: | 3000 |
Subcategoria: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typus: | MOSFET |
Typical Turn-Off mora Tempus: | 40 ns |
Typical Turn-De mora Tempus: | 20 ns |
Latitudo: | 1.3 mm |
Unitas pondus: | 0.00094 oz |
• BVSS Praefixum pro Automotivis et aliis Applicationibus Unicum Situm ac Imperium Mutare Requirements requirentes;AEC.Q101 secundum quid et PPAP Capax
• Hae machinae sunt Pb−Free et sunt RoHS Compliant