BSS123LT1G MOSFET 100V 170mA N-Channel

Description:

Manufacturers: DE Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Data Sheet:BSS123LT1G

Descriptio: MOSFET N-CH 100V 170MA SOT-23

RoHS status: RoHS Compliant


Product Detail

Features

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: onsemi
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Case: SOT-23-3
Transistor Polarity: N-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: 100 V
Id - Continua Exhaurire Current: 170 mA
Rds On - Drain-Source Resistentia: 6 Ohms
Vgs - Porta-Source Voltage: - 20 V, + 20 V
Vgs th - Porta-Source Limen Voltage: 1.6 V
Qg - porta praecipe: -
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 225 mW
Channel Modus: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: onsemi
Configurationis: Unius
Transconductance - Min: 80 mS
Height: 0.94 mm
Longitudo; 2.9 mm
Productum: MOSFET Parvus signum
Product Type: MOSFET
Series: BSS123L
Factory Pack Quantity: 3000
Subcategoria: MOSFETs
Transistor Type: 1 N-Channel
Typus: MOSFET
Typical Turn-Off mora Tempus: 40 ns
Typical Turn-De mora Tempus: 20 ns
Latitudo: 1.3 mm
Unitas pondus: 0.00094 oz

 


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