CSD88537ND MOSFET 60-V Dual N-Cannel Power MOSFET

Description:

Manufacturers: Texas Instrumenta
Product Category:MOSFET
Data Sheet: CSD88537ND
Descriptio: MOSFET 2N-CH 60V 15A 8SOIC
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Texas Instrumenta
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Causa: SOIC-8
Transistor Polarity: N-Channel
Numerus canalium: 2 Channel
Vds - Drain-Source Naufragii Voltage: 60 V
Id - Continua Exhaurire Current: 16 A
Rds On - Drain-Source Resistentia: 15 mOhms
Vgs - Porta-Source Voltage: - 20 V, + 20 V
Vgs th - Porta-Source Limen Voltage: 2.6 V
Qg - porta praecipe: 14 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 2.1 W
Channel Modus: Enhancement
Nomen: NexFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Texas Instrumenta
Configurationis: Dual
Fall tempus: 19 ns
Height: 1.75 mm
Longitudo; 4.9 mm
Product Type: MOSFET
Tempus surge: 15 ns
Series: CSD88537ND
Factory Pack Quantity: 2500
Subcategoria: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off mora Tempus: 5 ns
Typical Turn-De mora Tempus: 6 ns
Latitudo: 3.9 mm
Unitas pondus: 74 mg

CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

Hoc duale SO-8, 60 V, 12.5 mΩ NexFET™ potentia MOSFET ordinatur ut pro medietate pontis in applicationibus motoriis ditionis motoris minore fungatur.


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