FDD4N60NZ MOSFET 2.5A Output Current GateDrive Optocopler

Description:

Manufacturers: DE Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Data Sheet:FDD4N60NZ

Description: MOSFET N CH 600V 3.4A DPAK

RoHS status: RoHS Compliant


Product Detail

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: onsemi
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Case: DPAK-3
Transistor Polarity: N-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: DC V
Id - Continua Exhaurire Current: 1.7 A
Rds On - Drain-Source Resistentia: 1.9 Ohms
Vgs - Porta-Source Voltage: - 25 V, + 25 V
Vgs th - Porta-Source Limen Voltage: 5 V
Qg - porta praecipe: 8.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 114 W
Channel Modus: Enhancement
Nomen: UniFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: onsemi / Fairchild
Configurationis: Unius
Fall tempus: 12.8 ns
Transconductance - Min: 3.4 S
Height: 2.39 mm
Longitudo; 6.73 mm
Productum: MOSFET
Product Type: MOSFET
Tempus surge: 15.1 ns
Series: FDD4N60NZ
Factory Pack Quantity: 2500
Subcategoria: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off mora Tempus: 30.2 ns
Typical Turn-De mora Tempus: 12.7 ns
Latitudo: 6.22 mm
Unitas pondus: 0.011640 oz

 


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