FDV301N MOSFET N-Ch Digital
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 25 V |
| Id - Continua Exhaurire Current: | 220 mA |
| Rds On - Drain-Source Resistentia: | 5 Ohms |
| Vgs - Porta-Source Voltage: | - 8 V, + VIII V |
| Vgs th - Porta-Source Limen Voltage: | 700 mV |
| Qg - porta praecipe: | 700 pC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | CCCL mW |
| Channel Modus: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | onsemi / Fairchild |
| Configurationis: | Unius |
| Fall tempus: | 6 ns |
| Transconductance - Min: | 0.2 S |
| Height: | 1.2 mm |
| Longitudo; | 2.9 mm |
| Productum: | MOSFET Parvus signum |
| Product Type: | MOSFET |
| Tempus surge: | 6 ns |
| Series: | FDV301N |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typus: | FET |
| Typical Turn-Off mora Tempus: | 3.5 ns |
| Typical Turn-De mora Tempus: | 3.2 ns |
| Latitudo: | 1.3 mm |
| Pars # Aliases: | FDV301N_NL |
| Unitas pondus: | 0.00094 oz |
Digital FET, N-Channel FDV301N, FDV301N-F169
Hoc N−Channel logica planities amplificationis modus agri effectus transistoris nascitur usus onsemi proprietatis, cellae altae densitatis, technologiae DMOS.Hic processus densitatis altissimae praesertim formandus est ad resistentiam status minimize.Hoc artificium praesertim ad applicationes humilium intentionum adhibitas ut substitutio digitalis transistorum designata est.Cum studium resistentium non requiratur, hic N−channel FET varias transistores digitales substituere potest, cum valoribus diversis resistor.
• 25 V, 0.22 Continuus, 0.5 A Peak
♦ RDS(on) = 5 @ VGS = 2.7 V
♦ RDS(on) = 4 @ VGS = 4.5 V
• Minimum Level Porta Coegi Requirements Directa Operatio in 3 V Circuitibus permittens.VGS (th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness.> 6 kv Humani Corporis Exemplar
• Repone Multiplex NPN Digital Transistores cum One DMOS FET
• Id est PbFree et Halide Free
