IKW75N65EH5XKSA1 IGBT Transistores INDUSTRIA 14
Product Description
Productum attributum | Precium attributum |
Fabrica: | Infineon |
Product Category: | IGBT Transistors |
Technologia: | Si |
Sarcina / Case: | TO-247-3 |
Adscendens Style: | per foramen |
Configurationis: | Unius |
Collector- Emitte intentione VCEO Max: | 650 V |
Collector-Emitte Saturationis intentione: | 1.65 V |
Maxime Porta Emitte intentione: | 20 V |
Continua Collector Current ad 25 C: | 90 A |
Pd - Potentia dissipatio: | 395 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C |
Series: | Trenchstop IGBT5 |
Packaging: | Tubus |
Notam: | Infineon Technologies |
Porta-Emitte Lacus Current: | 100 nA |
Height: | 20.7 mm |
Longitudo; | 15.87 mm |
Product Type: | IGBT Transistors |
Factory Pack Quantity: | 240 |
Subcategoria: | IGBTs |
Nomen: | TRENCHSTOP |
Latitudo: | 5.31 mm |
Pars # Aliases: | IKW75N65EH5 SP001257948 |
Unitas pondus: | 0.211644 oz |
HighspeedH5technology offering
• optimus-in-Classefficiencyinhardswitchingandresonant topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
• IGBTcopacked withful-ratedRAPID1fastandsoftantiparallel diode
•Maximumjunctiontemperare175°C
• QualifiedaccordingtoJEDECfortargetapplications
• Pb-freeleadplating; RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
• Uninterruptiblepowersupplies
• Solarconverters
• Weldingconverters
• Midtohighrangeswitchingfrequencyconverters