IKW75N65EH5XKSA1 IGBT Transistores INDUSTRIA 14

Description:

Manufacturers: Infineon Technologies
Product Category: Transistors - IGBTs - Single
Data Sheet:IKW75N65EH5XKSA1
Description: IGBT TRANCH 650V 90A TO247-3
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Infineon
Product Category: IGBT Transistors
Technologia: Si
Sarcina / Case: TO-247-3
Adscendens Style: per foramen
Configurationis: Unius
Collector- Emitte intentione VCEO Max: 650 V
Collector-Emitte Saturationis intentione: 1.65 V
Maxime Porta Emitte intentione: 20 V
Continua Collector Current ad 25 C: 90 A
Pd - Potentia dissipatio: 395 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: Trenchstop IGBT5
Packaging: Tubus
Notam: Infineon Technologies
Porta-Emitte Lacus Current: 100 nA
Height: 20.7 mm
Longitudo; 15.87 mm
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategoria: IGBTs
Nomen: TRENCHSTOP
Latitudo: 5.31 mm
Pars # Aliases: IKW75N65EH5 SP001257948
Unitas pondus: 0.211644 oz

 


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    • optimus-in-Classefficiencyinhardswitchingandresonant topologies
    •PlugandplayreplacementofpreviousgenerationIGBTs
    •650Vbreakdownvoltage
    •LowgatechargeQG
    • IGBTcopacked withful-ratedRAPID1fastandsoftantiparallel diode
    •Maximumjunctiontemperare175°C
    • QualifiedaccordingtoJEDECfortargetapplications
    • Pb-freeleadplating; RoHScompliant
    •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

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