MGSF1N03LT1G MOSFET 30V 2.1A N-Channel
Product Description
Productum attributum | Precium attributum |
Fabrica: | onsemi |
Product Category: | MOSFET |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 30 V |
Id - Continua Exhaurire Current: | 2.1 A |
Rds On - Drain-Source Resistentia: | 100 mOhms |
Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
Vgs th - Porta-Source Limen Voltage: | 1 V |
Qg - porta praecipe: | 6 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 690 mW |
Channel Modus: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | onsemi |
Configurationis: | Unius |
Fall tempus: | 8 ns |
Height: | 0.94 mm |
Longitudo; | 2.9 mm |
Productum: | MOSFET Parvus signum |
Product Type: | MOSFET |
Tempus surge: | 1 ns |
Series: | MGSF1N03L |
Factory Pack Quantity: | 3000 |
Subcategoria: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typus: | MOSFET |
Typical Turn-Off mora Tempus: | 16 ns |
Typical Turn-De mora Tempus: | 2.5 ns |
Latitudo: | 1.3 mm |
Unitas pondus: | 0.00094 oz |
MOSFET - Single, N-Channel, SOT-23 30 V, 2.1 A
Hae superficies minimae mons MOSFETs humilis RDS(on) spondet vim minimam amissionem et industriam conservare, faciens has machinas usui aptas in spatio virtutis sensitivae administratione circumire.Applicatae typicae sunt dc convertdc convertentium et procuratio potentiarum portabilium et machinarum possibilium, ut computatores, impressores, chartarum PCMCIA, telephonicas cellulosae et cordulae.
• Maximum RDS (in) altiorem efficientiam et extensionem Pugna vitae
• Minature SOT−23 Superficie Mons Package Servat Board Space
• MV Praefixum pro Automotivis et aliis Applications Unicum Site ac Imperium Mutare Requirements requirunt;AEC.Q101 secundum quid et PPAP Capax
• Hae machinae sunt Pb−Free et sunt RoHS Compliant