SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | SC-89-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Numerus canalium: | 2 Channel |
| Vds - Drain-Source Naufragii Voltage: | 60 V |
| Id - Continua Exhaurire Current: | 500 mA |
| Rds On - Drain-Source Resistentia: | 1.4 Ohms, 4 Ohms |
| Vgs - Porta-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Porta-Source Limen Voltage: | 1 V |
| Qg - porta praecipe: | 750 pC, 1.7 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 280 mW |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Dual |
| Transconductance - Min: | 200 mS, 100 mS |
| Height: | 0.6 mm |
| Longitudo; | 1.66 mm |
| Product Type: | MOSFET |
| Series: | SI1 |
| Factory Pack Quantity: | 3000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off mora Tempus: | 20 ns, 35 ns . |
| Typical Turn-De mora Tempus: | 15 ns, 20 ns . |
| Latitudo: | 1.2 mm |
| Pars # Aliases: | SI1029X-GE3 |
| Unitas pondus: | 32 mg |
• Halogen-liber secundum IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Parvus Footprint
• Summus Latus Switching
• Minimum-Resistentia:
N-Channel, 1.40 Ω
P-Canale, 4 Ω
• Limen Belgicum: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Porta-Source ESD Protectus: 2000 V
• Obsequium RoHS Directivae 2002/95/EC
• Restituo Digital Transistor, Level-Shifter
• Pugna Operated Systems
• Power Supple Converter Circuitus
