SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8

Description:

Manufacturers: Vishay
Product Category:MOSFET
Data Sheet:SI7461DP-T1-GE3
Descriptio: MOSFET P-CH 60V 8.6A PPAK SO-8
RoHS status: RoHS Compliant


Product Detail

Features

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Vishay
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Causa: SOIC-8
Transistor Polarity: P-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: 30 V
Id - Continua Exhaurire Current: 5.7 A
Rds On - Drain-Source Resistentia: 42 mOhms
Vgs - Porta-Source Voltage: - 10 V, + 10 V
Vgs th - Porta-Source Limen Voltage: 1 V
Qg - porta praecipe: 24 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 2.5 W
Channel Modus: Enhancement
Nomen: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Vishay Semiconductors
Configurationis: Unius
Fall tempus: 30 ns
Transconductance - Min: 13 S
Product Type: MOSFET
Tempus surge: 42 ns
Series: SI9
Factory Pack Quantity: 2500
Subcategoria: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off mora Tempus: 30 ns
Typical Turn-De mora Tempus: 14 ns
Pars # Aliases: SI9435BDY-E3
Unitas pondus: 750 mg

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