SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8
Product Description
Productum attributum | Precium attributum |
Fabrica: | Vishay |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Causa: | SOIC-8 |
Transistor Polarity: | P-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 30 V |
Id - Continua Exhaurire Current: | 5.7 A |
Rds On - Drain-Source Resistentia: | 42 mOhms |
Vgs - Porta-Source Voltage: | - 10 V, + 10 V |
Vgs th - Porta-Source Limen Voltage: | 1 V |
Qg - porta praecipe: | 24 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 2.5 W |
Channel Modus: | Enhancement |
Nomen: | TrenchFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | Vishay Semiconductors |
Configurationis: | Unius |
Fall tempus: | 30 ns |
Transconductance - Min: | 13 S |
Product Type: | MOSFET |
Tempus surge: | 42 ns |
Series: | SI9 |
Factory Pack Quantity: | 2500 |
Subcategoria: | MOSFETs |
Transistor Type: | 1 P-Channel |
Typical Turn-Off mora Tempus: | 30 ns |
Typical Turn-De mora Tempus: | 14 ns |
Pars # Aliases: | SI9435BDY-E3 |
Unitas pondus: | 750 mg |
• TrenchFET® potentia MOSFETs
• Minimum scelerisque resistentia PowerPAK® sarcina cum low 1.07 mm profileEC