SI9435BDY-T1-E3 MOSFET 30V 5.7A 0.042Ohm
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | SOIC-8 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii Voltage: | 30 V |
| Id - Continua Exhaurire Current: | 5.7 A |
| Rds On - Drain-Source Resistentia: | 42 mOhms |
| Vgs - Porta-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Porta-Source Limen Voltage: | 1 V |
| Qg - porta praecipe: | 24 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 2.5 W |
| Channel Modus: | Enhancement |
| Nomen: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Vishay Semiconductors |
| Configurationis: | Unius |
| Fall tempus: | 30 ns |
| Transconductance - Min: | 13 S |
| Product Type: | MOSFET |
| Tempus surge: | 42 ns |
| Series: | SI9 |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off mora Tempus: | 30 ns |
| Typical Turn-De mora Tempus: | 14 ns |
| Pars # Aliases: | SI9435BDY-E3 |
| Unitas pondus: | 750 mg |
• Halogen-liber secundum IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Obsequium RoHS Directivae 2002/95/EC
