SIA427ADJ-T1-GE3 MOSFET -8V Vds 5V Vgs PowerPAK SC-70

Description:

Manufacturers: Vishay
Product Category:MOSFET
Data Sheet:SIA427ADJ-T1-GE3
Descriptio: MOSFET P-CH 8V 12A 6SC-70
RoHS status: RoHS Compliant


Product Detail

Features

APPLICATIONS

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: Vishay
Product Category: MOSFET
RoHS: Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Causa: SC-70-6
Transistor Polarity: P-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii Voltage: 8 V
Id - Continua Exhaurire Current: 12 A
Rds On - Drain-Source Resistentia: 95 mOhms
Vgs - Porta-Source Voltage: - 5 V, + 5 V
Vgs th - Porta-Source Limen Voltage: 800 mV
Qg - porta praecipe: 50 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 19 W
Channel Modus: Enhancement
Nomen: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Vishay Semiconductors
Configurationis: Unius
Product Type: MOSFET
Series: SIA
Factory Pack Quantity: 3000
Subcategoria: MOSFETs
Unitas pondus: 82.330 mg

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