VNB35NV04TR-E Power Switch ICs - Power Distribution N-Ch 70V 35A OmniFET

Description:

Manufacturers: STMicroelectronics
Product Category: PMIC - Power Distribution SWITCH, Load Coegi
Data Sheet:VNB35NV04TR-E
Description: MOSFET OMNIFETII 40V 30A D2PAK
RoHS status: RoHS Compliant


Product Detail

Features

Product Tags

Product Description

Productum attributum Precium attributum
Fabrica: STMicroelectronics
Product Category: Virtus SWITCH ICS - Power Distribution
Typus: Humilis Latus
Numerus outputs: 1 output
Current Limit: 30 A
De Resistentia - Max: 13 mOhms
On Time - Max: 500 ns
Off Time - Max: 3 us
Supple intentione operating: 24 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Adscendens Style: SMD/SMT
Sarcina / Case: D2PAK-2
Series: VNB35NV04-E
Quid: AEC-Q100
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: STMicroelectronics
Humor Sensitivus: Ita
Pd - Potentia dissipatio: 125 W
Productum: Onus SWITCH
Product Type: Virtus SWITCH ICS - Power Distribution
Factory Pack Quantity: 1000
Subcategoria: SWITCH ICs
Unitas pondus: 0.09385 oz

OMNIFET II: plene autoprotected Power MOSFET

VNB35NV04-E, VNP35NV04-E et VNV35NV04-E sunt cogitationes monolithicae in STMicroelectronics® VIPower® M0-3 Technologiae designatae, destinatae ad reponendas normas potentiae MOSFETs ab DC usque ad 25 kHz applicationes.

In shutdown scelerisque constructa, limitatio currentis linearis, fibulae et overvoltages, chip in ambitus asperos protegit.Culpa feedback potest deprehendi ex vigilantia intentione in input clavum.


  • Previous:
  • Deinde:

  • • Linear current limitatio
    • scelerisque shutdown
    • Short circuitu praesidium
    • Integrated Fibulae
    • Minimum current ex initus pin
    • Diagnostic feedback per initus pin
    • ESD praesidium
    • Dirige accessum ad portam potestatis MOSFET (analog incessus)
    • Compatible cum vexillum Power MOSFET

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