VNS3NV04DPTR-E Gate Coegi OMNIFET II VIPower 35mOhm 12A 40V
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | STMicroelectronics |
| Product Category: | Porta Coegi |
| RoHS: | Singula |
| Productum: | MOSFET porta Coegi |
| Typus: | Humilis-Latus |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOIC-8 |
| Numerus Coegi: | II Coegi |
| Numerus outputs: | 2 Output |
| Output Current: | 5 A |
| Supple intentione - Max: | 24 V |
| Tempus surge: | 250 ns |
| Fall tempus: | 250 ns |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | VNS3NV04DP-E |
| Quid: | AEC-Q100 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | STMicroelectronics |
| Humor Sensitivus: | Ita |
| Supple Current operating: | 100 uA |
| Product Type: | Porta Coegi |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | PMIC - Power Management ICs |
| Technologia: | Si |
| Unitas pondus: | 0.00291 oz |
OMNIFET II plene autoprotected Power MOSFET
VNS3NV04DP-E fabrica ex duobus assulis monolithicis (OMNIFET II) constituitur in involucro vexilli SO-VIII.OMNIFET II ordinatur utens STMicroelectronics™ VIPower™ M0-3 technologiae et destinatur ad substituendum vexillum Power MOSFETs usque ad 50 kHz DC applicationes.
In shutdown scelerisque constructa, limitatio currentis linearis, fibulae et overvoltages, chip in ambitus asperos protegit.
Culpa feedback potest deprehendi magna intentione ad initus pin
■ ECOPACK®: liberum ducere et obsequiosum RoHS
■ Automotive Grade: obsequio AEC guidelines
■ Linear current limitatio
■ Scelerisque shutdown
■ brevis circuitu praesidium
■ Integrated Fibulae
■ Minimum current ex input pin
■ Diagnostic feedback per initus pin
■ ESD praesidium
■ Dirige aditum ad portam Potentiae MOSFET (analog incessus)
■ Compatible cum vexillum Power MOSFET
