SIA427ADJ-T1-GE3 MOSFET -8V Vds 5V Vgs PowerPAK SC-70
Product Description
Productum attributum | Precium attributum |
Fabrica: | Vishay |
Product Category: | MOSFET |
RoHS: | Singula |
Technologia: | Si |
Adscendens Style: | SMD/SMT |
Sarcina / Causa: | SC-70-6 |
Transistor Polarity: | P-Channel |
Numerus canalium: | 1 Channel |
Vds - Drain-Source Naufragii Voltage: | 8 V |
Id - Continua Exhaurire Current: | 12 A |
Rds On - Drain-Source Resistentia: | 95 mOhms |
Vgs - Porta-Source Voltage: | - 5 V, + 5 V |
Vgs th - Porta-Source Limen Voltage: | 800 mV |
Qg - porta praecipe: | 50 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Potentia dissipatio: | 19 W |
Channel Modus: | Enhancement |
Nomen: | TrenchFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Notam: | Vishay Semiconductors |
Configurationis: | Unius |
Product Type: | MOSFET |
Series: | SIA |
Factory Pack Quantity: | 3000 |
Subcategoria: | MOSFETs |
Unitas pondus: | 82.330 mg |
• TrenchFET® potentia MOSFET
• scelerisque consectetur PowerPAK® SC-LXX sarcina
- Parvus vestigium area
- Minimum in-resistentia
• 100 % Rg probatum
• Load switch, for 1.2 V power line for portable and handheld machinis