VNS1NV04DPTR-E Gate Coegi OMNIFET POTESTATE MOSFET 40V 1.7 A
Product Description
| Productum attributum | Precium attributum |
| Fabrica: | STMicroelectronics |
| Product Category: | Porta Coegi |
| Productum: | MOSFET porta Coegi |
| Typus: | Humilis-Latus |
| Adscendens Style: | SMD/SMT |
| Sarcina / Case: | SOIC-8 |
| Numerus Coegi: | II Coegi |
| Numerus outputs: | 2 Output |
| Output Current: | 1.7 A |
| Supple intentione - Max: | 24 V |
| Tempus surge: | 500 ns |
| Fall tempus: | DC ns |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | VNS1NV04DP-E |
| Quid: | AEC-Q100 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | STMicroelectronics |
| Humor Sensitivus: | Ita |
| Supple Current operating: | CL uA |
| Product Type: | Porta Coegi |
| Factory Pack Quantity: | 2500 |
| Subcategoria: | PMIC - Power Management ICs |
| Technologia: | Si |
| Unitas pondus: | 0.00291 oz |
OMNIFET II plene autoprotected Power MOSFET
VNS1NV04DP-E fabrica a duobus monolithicis OMNIFET II formata est astulas in involucro SO-8 normali positos.OMNIFET II ordinantur in STMicroelectronics VIPower™ M0-3 technologiae: ordinantur ad substituendum vexillum Power MOSFETs ab DC usque ad 50KHz applicationes.In shutdown scelerisque constructa, limitatio currentis linearis et fibulationis overvoltatio tuetur spumam in ambitus asperis.
Culpa feedback potest deprehendi ex vigilantia intentione in input clavum.
• Linear current limitatio
• scelerisque shutdown
• Short circuitu praesidium
• Integrated Fibulae
• Minimum current ex initus pin
• Diagnostic feedback per initus pin
• ESD praesidium
• Dirige accessum ad portam virtutis mosfet (analog incessus)
• Compatible cum vexillum potentia mosfet
• In obsequio cum 2002/95/EC directivis europaeis
